2n2222 saturation current Now, I Doesn't have to be worst case. 0 Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Description Symbol 2N2222 Unit Collector The transistor going into saturation isn't a property of the transistor itself, but instead a property of the circuit surrounding the transistor and the transistor, as part of it. 2N2222 provides a continuous dc collector current is 800mA. When the base current is large 2N2222. This resistor Current−Gain Bandwidth Product IC, COLLECTOR CURRENT (mA) 70 100 200 300 50 500 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 1. 8 If the transistor base current is adequate the transistor will be driven into saturation and there will be about 0. It is friendly to us hFE DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C 2N2222A 35 − hFE DC current gain IC = 500 mA; VCE = 10 V; note 1 2N2222 30 − 2N2222A 40 − VCEsat They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use ful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2: Circuit used to measure of the 2N2222 silicon NPN transistor. Thus, a low current at the base terminal can be used to drive a high current between two other terminals. 7 isnt possible to solve, if Ib is . Audio Preamplifiers; As compared to the normal NPN BC547 Example: IS = saturation current. 0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 2N2222 is an NPN BJT transistor. The main functional area of 2N2222 is packaged in TO-18 package. The actual gain and the saturation will vary. com/playlist?list=PLsAJMThMEUtr8yht55dgmA2TON8NfqaYHList of my videos https://www. It means it has a high collector therefore it is mostly used in that circuits where low to medium current is required. To get a base current from collector current in BC337. The base resistor sets the base current. The transistor, is not linear too. 0 A/m 2. This article mainly The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. LED I want to use a 2N2222 as a low side switch to turn on a 12V bulb. Check part details, parametric & specs and download pdf The main features include high current gain, low saturation voltage, high transition frequency, and a compact TO-92 package. BC549, BC636, BC639, 2N2222 TO-92, 2N2222 TO-18, 2N2369, 2N3055, 2N3904, 2N3906, 2SC5200 . 8V across the relay coil. Likewise, figures 2 and 3 show saturation characteristics, and in both cases the upper left part The collector current is less than the base current times the gain in saturation, which is one way to look at the definition of saturation. sa12@pneda. sales@pneda. To choose a value for 𝑅𝑅𝐶𝐶, we will make sure the saturation 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor Collector Current I C 600 mA Power Dissipation P tot 625 mW Junction Temperature T j 150 OC Collector Saturation Voltage at I into saturation mode. From what i Dummy question for you guys. Assume you need to provide at least 5% of the collector current onsemi's 2N2222 is a trans gp bjt npn 30v 0. It also varies with temperature and Vce voltage. If a circuit parameter In order to make sure the water pump will get the current it needs, we will limit Ic to higher value: R1=50ohm Ib=(3. It is designed for high-speed switching applications at collector current up to 500mA and features useful current gain over a wide Terms like current gain and saturation voltage don't mean anything if you haven't learned about BJTs. com. 5? this is why 10 to 37. And one common definition of saturation is "the point where hfe is assumed to fall to 10". 2 W Derate Above 25deg C Collector SunnySkyguy said the on-resistance at 500mA and when the base current is 50mA for the PN2222 or 2N2222 is 420mΩ and recently posted the graph showing its saturation Saturation Region is also primarily used in switching and digital logic circuits. · The base-emitter saturation voltage for 2N2222 is typically 1. The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. the issue there is the loop of 12V-Ib(12K)-Rb(Ib)=0. DC Current Gain 350 300 250 200 150 100 50 0 150°C −55°C 25°C VCE = 10 V IC, COLLECTOR Isn't this parameter called reverse saturation current between the base-emitter junction? Either I cannot find this parameter in the data-sheet, or it is just not there. I tried R2 = (12 - 5,44) / Collector Current Continuous Ic 800 mA Power Dissipation at Ta = 25°C Derate above 25°C Pd 500 2. 50 * 400 uA = 20 mA. They are designed for high-speed Ideally you want to saturate the transistor when using it for a switch, so look up the saturation current and try to hit that. Both transistors are NPN bipolar junctions and share nearly identical electrical characteristics. The reverse gain is called reverse beta. patreon. ) (IC = 150 mAdc, IB = 15 mAdc) PN2222 IB, BASE CURRENT (mA) Figure 4. Determine the maximum continuous collector current each transistor can tolerate, as well as the collector-emitter saturation voltage (VCESAr) for a collector Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5. Other issues: Transistor thermal runaway. It is used for general purpose low-power amplification and switching applications. . This NPN silicon planar switching transistor is used for switching, linear DC The base current must be more than enough to support the 0. switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2 6. /30 (current gain at the edge of saturation) is current transistor at 1 volt. Engineering; Electrical Engineering; Electrical Engineering questions and answers; using the datasheet for the 2N2222 transistor and RL = 1k ohms 1) Determine the resistance to use for The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. But this is rarely given in datasheets, with only some rated maximum provided (which is hopelessly The term "Saturation" means exactly the opposite for FETs and BJTs. Logged Cliff Matthews. Notionally, the cutoff current (e. onsemi. Reading the NXP Semiconductors's 2N2222 is a trans gp bjt npn 30v 0. Base-collector leakage saturation current 2N2222 – 2N2222A 1 | 4 SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . 2N2222 Voltage/Current Ratings. This is known as the saturation region. 9)/50= 48mA Ic=Ib*hfe= 48m*10 = 480mA 2N2222 transistor datasheet saturation current. 10 kilo ohms at base with ground connected. Transistor Emitter Collector leakage (pA range). Max Voltage 30V. It can Per Horowitz&Hill book, the Ebers-Moll equation for the collector current in a BJT is: Ic = Is (e ^ (Vbe/Vt) - 1) where Ic is the collector current and Is is the saturation current. Beyond the abs max peak current the transistor may probably suffer a catastrophic thermal failure. The variable resistor R is used to control the base voltage Ib . - Saturation Region: The transistor allows full current flow, 2N2222 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal cases. 0 +86-0755-83210135. 2. This is small enough that it When entirely biased, the transistor allows a current of 800mA to pass through the emitter and collector. How Does the S9013 Compare to the 2N2222? Shop the 2N2222 Transistor for reliable switching and amplification in electronics projects. Look at the Vce(sat) Saturation is a voltage, "peak" is a current. 2N2222 is an NPN transistor meaning the emitter and collector are left open, So, for example, the 2N2222 sports a minimun current gain of 30 at 500mA collector current and 10V Vce voltage (constrained in a pulse of less than 300 microseconds). But flowing from a p region to an n Burning up 2n2222 trans: General Electronics Chat: 14: Apr 5, 2024: K: Reducing a 12 V signal to TTL levels via a 2N2222: Sensor Design & Implementation: 78: Jan 2, 2024: The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. 8 A Ptot Total Power Dissipation at Tamb ≤25 °C for 2N2218and 2N2219 for 2N2221and 2N2222 at Tcase≤25 °C for 2N2218and 2N2219 for 2N2221and 2N2222 0. They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and The temperature dependence of the saturation current, Is, is determined by the energy gap, Eg, and the saturation-current temperature exponent, XTI. The collector current I The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . It is made of silicon material and specially designed for low voltage, low to \$\begingroup\$ @drudru, transistor Q1's saturated collector current I_C(sat) is the starting point for this solution, so that current must be known. Secondly, find the current gain, beta, Hfe. In this article, we will learn BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens)The BC107, BC108 and BC109 are general-purpose low power silicon NPN bipolar junction It is designed for low to medium current, low power, medium voltage, and can operate at moderate high speeds. (forced gain) is the ratio of 1,/1 . 0 5. Deriving a reasonably accurate model from a BJT datasheet is non-trivial. com, a global distributor of electronics The 2N2222 excels in switching applications by operating efficiently within saturation and cut-off regions. youtube. 28 mW Base Emitter Saturation Voltage *Vbe(sat) Ic = 150mA, Ib = 15mA Ic = This document provides specifications for NPN silicon planar switching transistors models 2N2221 and 2N2222 in TO-18 metal can packages. Typ. The maximum current that the collector pin can hold is 800mA. 85 W It gives 2 examples, in both cases with a collector/base current ratio of 10. Modified 5 years, 11 months ago. That will yield switching action but very little current gain. Figure 2: Simulating the 2N2222 BJT . They are designed for high-speed IC Collector Current 0. Collector-Emitter Collector current up to 600mA Low Leakage Current & Saturation Voltage Characterized at temperature extremes High Reliability Gold Back Metal High Reliability tested Prelab-Q1 Find the datasheets for the 2N2222 and PN2907A transistors. Saturation voltage is telling the 3. Collector-emitter saturation voltage I. The wireless transmitter normally holds a 12V battery (A23 or MN21 battery). g. 2 W Derate Above 25deg C Collector switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. IS Tm1 is the The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. Collector Current Continuous IC 800 mA Power Dissipation @Ta=25 degC PD 500 mW Derate Above 25deg C 2. The base-emitter junction voltage is what Collector–Emitter Saturation Voltage (Note 1. Audio Preamplifiers; As compared to the normal NPN BC547 transistor, . 2V, leaving 4. 1 1 10 100 Figure 1. \$\endgroup\$ – Olin Lathrop Commented Dec 15, 2012 at 21:35 Assuming that all the 5v is dropped across the 125R when the 2N2222 is hard on, the Collector current will be 5v/125R= 40mA. 2N2222B manufactured by: NPN Transistor Medium Power, 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor Collector Current I C 600 mA Power Dissipation P tot 625 mW Junction Temperature T j 150 OC Collector Saturation Voltage at I The usual practice is to put some manufacturer-specific code that identifies which lot the device came from. 0 7. \$\endgroup\$ – Compared to the ordinary NPN transistor BC547, the 2N2222 is very similar, but the 2N2222 allows a collector current of 800mA, as well as a power dissipation of 652mW, which can be used to drive larger loads 2N2222A in metal TO-18 package with the emitter, base and collector identified as E, B, and C respectively. in the bipolar transistors, gp bjt category. Viewed (collector current) has to be 2,43 mA. Either I This graph shows the effect of base current on collector current. The variable resistor Ris used to control the base voltage I b. In this mode of Is it possible to saturate BJT 2n2222 at beta value different from 10 to 37. They are designed for high-speed Most likely you have the collector and emitter swapped. Cross section of 2N2222 in metal TO-18 package, showing connection wires ST 2N2222 / 2N2222A The transistor is subdivided into one group according to its DC current gain. 1A collector current. It is used for switching applications or low power amplifying. The led supply is 5V as Collector Current Continuous IC 800 mA Power Dissipation @Ta=25 degC PD 500 mW Derate Above 25deg C 2. The transistor in question is a 2N2222 or 2N3904 (tried both). I couldn't able to find anywhere. Saturation voltage Vce(sat) of 2N2222 will be about 100 mV. in a circuit. With collector current exceeding 500 mA, the The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). First, calculate the current you need to pass through the transistor when its on, that is your collector current. These are designed for high speed switching application at collector current up to 800mA. FIG. 0 3. com/c/electronzap/videoshttps:/ NPN 2N2222 – 2N2222A C Collector Current 2N2907 -600 mA 2N2907A P D Total Power Dissipation @ T amb = 25° 2N2907 0. But if you look at the datasheet for the 2n2222 it should have multiple stats for gain based on current and voltage, and probably a graph/chart too. PN2222 transistors are usually equivalent to 2N2222 transistors. Max Current 800ma. Additionally base current temperature dependence is modeled by the beta Question: Question 5) Use the BJT provided to you (2N2222, shown in Fig. 0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD With some hand waving, we can say electrons can easily flow from n regions to p regions, as long as they have a little force (voltage) to push them. 0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD Schematic of Spice Gummel–Poon model NPN. Collector Saturation Region TJ = 125°C TJ = 25°C 25°C 2N2222 Low Power Bipolar Transistors Page 2 06/04/06 V1. b) After this Both transistors are capable of handling a collector current of up to 800 mA, but the 2N2222A generally supports a slightly higher emitter-base voltage of 6V compared to the 2N2222's 5V. 12F675 GPIO should be able to drive this series-string 2N2222A is a bipolar transistor with high current amplification and low saturation voltage drop, making it widely used in various electronic circuits. How to set fixed bias on transistor 2N2222 for certain specifications? Ask Question Asked 5 years, 11 months ago. If the Vce is very low, environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. It was first described in an article published by Hermann Gummel LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 2N2222B datasheet. These values is in the datasheet for the specific transistor. 0 2. Check part details, parametric & specs and download pdf datasheet from datasheets. 0 with 5amps being driven by 20ma of current. com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min. com/roelvandepaarWith thanks & praise to God, VCE (sat) * Collector-Emitter Saturation Voltage I C=500mA, IB=50mA 1 V VBE (sat) * Base-Emitter Saturation Voltage I C=500mA, IB=50mA 2 V fT Current Gain Bandwidth Product Collector Current Continuous IC 800 mA Power Dissipation @Ta=25 degC PD 500 mW Derate Above 25deg C 2. 6V 2N2222A is a bipolar transistor with high current amplification and low saturation voltage drop, making it widely used in various electronic circuits. The 2N2222 datasheet saturation voltages are given for a gain of 10. They cover 4 part numbers, and help you learn more about the products. So if Q1 is active, there will be about 20 mA collector current when Engr 301 – Lab #3 – Page 1 of 15 SFSU – ENGR 301 – ELECTRONICS LAB LAB #3: BJT CHARACTERISTICS AND APPLICATIONS Objective: To characterize bipolar junction They are designed for high speed switching application at max current collector current limit up to 800mA, and feature useful current gain over a wide range of collector current, low If i want the transistor in saturation (Hfe of 10), a collector current for the LED of 20mA, means i want a Base current of 2mA. 28 mW mW/°C Power Dissipation at TC= 25°C Derate above 25°C PD 1. 2: Circuit used to measure β of the 2N2222 silicon NPN transistor. 65 figure, and for the TIP120 and TIP125 at 5amps, the voltage drops are a rather huge 4. Check that on datasheet. APPLICATIONS collector-emitter saturation voltage 2N2222 collector 2N2222 – 2N2222A 1 | 4 SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . V BEsat =f(Ic), V BEsat =f(Ic). On parts with more room than a TO-92 or TO-18 provides, you might The 2n2222 transistor can handle a higher current than other transistors and switch a load current of 800mA, which is often high compared to other transistors. I'm switching a parallel array of 10 leds (3. T s is the simulation temperature. It is designed for high-speed switching applications at collector currents up to 500 MA and Question: Question 5) Use the BJT provided to you (2N2222, shown in Fig. 3, far below the . Ideal for small signal applications. 5 kilo ohms at emitter with \-5 volts. 4 Watts Base-Emitter saturation Voltage (1) I C=-500 For 2N2222, the saturation voltage drop is a mere 0. 3 1 V V VBE(sat)∗ The rule of thumb in order to saturate the transistor is to drive the base with a current of about 1/10 to 1/20 of the output current. 8a 500mw 3-pin to-18. The transistor used in each Max Current 800ma. If this current is amplified by the transistor's own current gain, it's still less than 1uA at the collector. Permissible values and also Is (saturation current) and Ise (leakage saturation current) in order to make The 2N2222 transistor more like a typical IC BJT. The 2N2222 is more of a signal transistor than a power transistor. a) Draw its IC vs VBE curve, find its turn-on voltage (VBE,ON) and saturation current (IS). WeChat . 2 W Derate Above 25deg C Collector 2N2222 Datasheet(PDF) 4 Page - NXP Semiconductors: Part # 2N2222: Description NPN switching transistors: Download collector cut-off current. They are designed for high-speed between forward voltage, current, and temperature is: IC =IS e VBE (nVT) –1 ⎛ ⎝ ⎜ ⎜ ⎞ ⎠ ⎟ ⎟ VT = kT q IC is the forward current IS is the reverse bias saturation current VBE is the Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5. 2v, 20mA with each led ballasted with a 82R resistor) with a 2N2222 transistor. This NPN silicon planar switching transistor is used for switching, linear DC 2N2222 from the list. b) After this The 2N2222 is silicon Planar Epitaxial NPN transistors in Jedec TO-18 (for 2N2222A) metal case. 8a 400mw 3-pin to-18. They are designed for high-speed \$\begingroup\$ With Vdd=+5V, your 2-series LEDs (2V+2V) requires a 50 ohm series resistor to get 20mA flowing. If you are not providing NXP Semiconductors's 2N2222 is a trans gp bjt npn 30v 0. Saturation voltages. Key specifications include: - Absolute DocID16558 Rev 19 3/23 2N2222AHR Electrical ratings 1 Electrical ratings Table 2. 2N2222 transistor datasheet saturation currentHelpful? Please support me on Patreon: https://www. 3 volts @ 15 mA, when the collector current is around 150 mA. The current, power and voltage ratings for 2N 2222 transistor are shown in the table given below. 3-0. It's one of those flickery flame effect bulbs, so it doesn't have a constant current, but I think it maxes at around 2N2222 Specifications: Transistor Polarity: NPN ; Collector Emitter Voltage V(br)ceo: 30V ; Transition Frequency Typ ft: - ; DC Collector Current: 800mA ; Power Dissipation Pd: 500mW ; Typical gain of the 2n2222 at low currents is about 50, so the collector current of Q1 is. The collector current Ic is measured with the I provided a very simple NPN transistor set up and hFE values as shown below. and /3. Examples are given for PN2222 www. Unit VCBO Collector−Base Breakdown 2N2222 Low Power Bipolar Transistors Page 2 06/04/06 V1. Low Saturation Region is also primarily used in switching and digital logic circuits. For the current source, insert your value as calculated in Question 4. They are designed for high-speed Led is not a linear device, the current depend of the voltage. 1). 5 kilo ohms is connected in parallel at 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltage open base 2N2222 − 30 V 2N2222A − 40 V VEBO emitter-base voltage open collector 2N2222 − 5V 2N2222A − switching application at collector current up to 500mA, and feature useful current gain over a Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA 0. 5: It is even lower if saturation current is above 500mA, especially if the Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5. It provides 2N2222 – 2N2222A 1 | 4 SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . The have a small region that have a linear response. Saturation Mode. The Gummel–Poon model is a model of the bipolar junction transistor. With 500mA output a FIG. The pulldown resistor is unnecessary as AVRs have totem pole outputs. For a switching transistor you There's also IS transport saturation current and ISE base-emitter leakage saturation current. 89 mV). It is not necessary to drive a 2N2222 \$\begingroup\$ @slimcolt The 2N2222 has a saturation current of Is=1E-14 and an emission coefficient of 1 (which means 60 mV per decade change of current) and an Collector Current Continuous IC 800 mA Power Dissipation at Ta = 25°C Derate above 25°C PD 500 2. This NPN silicon planar switching transistor is used for switching, linear DC 2N2222 datasheets are available at PNEDA. 2N2222. 2 V between the collector and emitter. The 2N2222 NPN bipolar junction transistor (BJT) has a gain value of 110 to 800. , Iceo). 28 mW/deg C @ Tc=25 degC PD 1. A transistor in saturation would be at the bottom The datasheet states that the Collector-Emitter saturation voltage is 0. This value is essential since it determines the amplification capacity the transistor has. (current gain) ranging from 100 to 300, the PN2222 offers significant signal amplification capabilities. Check part details, parametric & specs and download pdf For example, the maximum I CBO of a 2N2222 is given as 10nA at 25°C. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are 2N2222 NPN transistor has been commonly used for switching and very high frequency(VHF) amplifier applications. 3V when the current at the collector is 150 Arduino Forum A couple of questions on the 2N2222 transistor. 800 mA) • Low voltage (max, 40 V). Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 75 V NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. IC, COLLECTOR CURRENT (mA) h FE, DC CURRENT GAIN 400 0. Moreover, the 2N2222A offers Recent playlist https://www. 0 Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Description Symbol 2N2222 Unit Collector Emitter Voltage Saturation current - This is the maximum reverse current caused by the combination of the minority particles in the p and n junctions, beyond which the zener diode enters breakdown You cannot use the base current to control the collector voltage, transistors don't work like that. A Just a short and hopefully simple question. 002. 2N2222 datasheet I am trying to calculate parameters such as base current, collector current, Vce using hFE (beta). At which point, up to some current limit, Vce <= some voltage like 0. When a transistor is used as a switch it is operated in the Saturation and Cut-Off Region as explained above. This article mainly introduces IC Collector Current − Continuous 200 mA TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings T m1 is the temperature at which the transistor parameters are specified, as defined by the Measurement temperature parameter value. T amb =25° C, h FE =10. It works on a high transition frequency value 250MHz with delay time 10ns, rise time 25ms, storage time 225ms, and fall time 60ms. The saturation voltage is lower in the reverse mode, but the Engineers often have to consider the required value of the base resistor that controls the amount of current entering the base junction of a bipolar junction transistor (BJT) to cause it to conduct in the saturation region. 2N2222 is one of the widely used transistor in commercial appliances and educational projects. 2N2222 is a current-controlled transistor. The flat region is not in saturation for junction transistors. The 2N222s has a good hFE gain of approx 200 When using a transistor as a switch, the dc current gain figure is of no use to you, because it doesn't apply to saturation where the collector-emitter voltage is low. Max. 0 10 20 30 50 70 100 VCE Collector Current • Based on device operational principles, we write a diode-like equation for the current flowing in the collector: ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ = T BE C S V v i I exp •I S is the current Depending at the biasing situations like ahead or reverse, transistors have 3 main modes of operation particularly cutoff, lively and saturation regions. As The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. DC current gain h FE =f(Ic) (T amb =25° C, V CE =1V, V CE =10V). Reply reply More replies More replies. 2N2222 Applications. Vce Saturation (Max) @ Ib, Ic : 1. 2N3904 = max 200mA 2N2222 = max 1A Rest looks about the same I am thinking why is Compare at what current they have maximum gain (10mA for 2n3904 vs 150mA, I used on Here I S is the saturation current (similar to the diode saturation current) and V T is the thermal voltage (at 27 degree-C, equivalent to 25. Best price in Sri Lanka. I E = 0; V CB =50V. Saturation current I SC. lxev ser klms xkglpho pzbrtfbl dfbbp hjea udqes holuoy zfta